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MB85RC256V FRAM Breakout Non-Volatile Memory IC VCC/Logic FRAM Breakout Board Module for IoT Sensor Wearable Device

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Kuvaus ja tiedot

Yhteenveto

  • 1. Non-volatile FRAM: FRAM is a non-volatile memory technology of FRAM breakout board that allows for effortless read and write operations up to an astonishing 10 trillion times. This durability ensures long-lasting performance and reliability for your data storage needs.
  • 2. Similar to DRAM with Ferroelectric Layer: Functioning similarly to dynamic random-access memory (DRAM), our FRAM breakout board uses a ferroelectric layer instead of a dielectric layer. This unique design enhances the overall performance and efficiency of the memory, ensuring faster data access and reduced power consumption.
  • 3. Low-Power Data Logging: Our FRAM breakout is specifically designed to work seamlessly with low-power data recorders and effectively buffers data in situations where a stable voltage source is not available. This makes it an excellent choice for applications requiring reliable data retention even in challenging environments.
  • 4. 32KB Memory: The FRAM chip we utilize provides a generous 32KB of storage capacity, allowing for ample data storage. Additionally, it operates at a high clock speed of up to 20 MHz, ensuring swift data read and write operations, ideal for demanding applications.
  • 5. Instant Read/Write: Each byte of our VCC/Logic FRAM breakout board module offers instantaneous read and write capabilities. Moreover, at room temperature, the memory can preserve data for many years, providing the balance between real-time accessibility and long-term data retention.

MB85RC256V FRAM Breakout Non-Volatile Memory IC VCC/Logic FRAM Breakout Board Module for IoT Sensor Wearable Device Kuvaus

1. Non-volatile FRAM: FRAM is a non-volatile memory technology of FRAM breakout board that allows for effortless read and write operations to an astonishing 10 trillion times. This durability ensures long-lasting performance and reliability for your data storage needs.
2. Similar to DRAM with Ferroelectric Layer: Functioning similarly to dynamic random-access memory (DRAM), our FRAM breakout board uses a ferroelectric layer instead of a dielectric layer. This unique design enhances the overall performance and efficiency of the memory, ensuring faster data access and reduced power consumption.
3. Low-Power Data Logging: Our FRAM breakout is specifically designed to work seamlessly with low-power data recorders and effectively buffers data in situations where a stable voltage source is not available. This makes it an excellent choice for applications requiring reliable data retention even in challenging environments.
4. 32KB Memory: The FRAM chip we utilize provides a generous 32KB of storage capacity, allowing for ample data storage. Additionally, it operates at a high clock speed of to 20 MHz, ensuring swift data read and write operations, ideal for demanding applications.
5. Instant Read/Write: Each byte of our VCC/Logic FRAM breakout board module offers instantaneous read and write capabilities. Moreover, at room temperature, the memory can preserve data for many years, providing the balance between real- accessibility and long-term data retention.

Color:
Material: plastic

Package Contents:
1*FRAM Breakout Board

Tiedot

OPC PVGTYW8
Koodit 4713550846757 (EAN)

Tuotekuvat

MB85RC256V FRAM Breakout Non-Volatile Memory IC VCC/Logic FRAM Breakout Board Module for IoT Sensor Wearable Device 1
MB85RC256V FRAM Breakout Non-Volatile Memory IC VCC/Logic FRAM Breakout Board Module for IoT Sensor Wearable Device 2
MB85RC256V FRAM Breakout Non-Volatile Memory IC VCC/Logic FRAM Breakout Board Module for IoT Sensor Wearable Device

Tuotetiedot

Height1cm
Width2cm
Length3cm
Weight0.0055kg
ColourBlue
MaterialPlastic

Sorry, this item is temporarily out of stock.

MB85RC256V FRAM Breakout Non-Volatile Memory IC VCC/Logic FRAM Breakout Board Module for IoT Sensor Wearable Device

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