3X MB85RC256V FRAM Breakout Non-Volatile Memory IC VCC/Logic FRAM Breakout Board Module for IoT Sensor Wearable Device
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Toimitus: Vakio (4,50 €) | pe 16. - ke 21. loka
Palautukset: 30 päivää
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Yhteenveto
- 1. Non-volatile FRAM: FRAM is a non-volatile memory technology of FRAM breakout board that allows for effortless read and write operations up to an astonishing 10 trillion times. This durability ensures long-lasting performance and reliability for your data storage needs.
- 2. Similar to DRAM with Ferroelectric Layer: Functioning similarly to dynamic random-access memory (DRAM), our FRAM breakout board uses a ferroelectric layer instead of a dielectric layer. This unique design enhances the overall performance and efficiency of the memory, ensuring faster data access and reduced power consumption.
- 3. Low-Power Data Logging: Our FRAM breakout is specifically designed to work seamlessly with low-power data recorders and effectively buffers data in situations where a stable voltage source is not available. This makes it an excellent choice for applications requiring reliable data retention even in challenging environments.
- 4. 32KB Memory: The FRAM chip we utilize provides a generous 32KB of storage capacity, allowing for ample data storage. Additionally, it operates at a high clock speed of up to 20 MHz, ensuring swift data read and write operations, ideal for demanding applications.
- 5. Instant Read/Write: Each byte of our VCC/Logic FRAM breakout board module offers instantaneous read and write capabilities. Moreover, at room temperature, the memory can preserve data for many years, providing the balance between real-time accessibility and long-term data retention.
3X MB85RC256V FRAM Breakout Non-Volatile Memory IC VCC/Logic FRAM Breakout Board Module for IoT Sensor Wearable Device Kuvaus
1. Non-volatile FRAM: FRAM is a non-volatile memory technology of FRAM breakout board that allows for effortless read and write operations to an astonishing 10 trillion times. This durability ensures long-lasting performance and reliability for your data storage needs.
2. Similar to DRAM with Ferroelectric Layer: Functioning similarly to dynamic random-access memory (DRAM), our FRAM breakout board uses a ferroelectric layer instead of a dielectric layer. This unique design enhances the overall performance and efficiency of the memory, ensuring faster data access and reduced power consumption.
3. Low-Power Data Logging: Our FRAM breakout is specifically designed to work seamlessly with low-power data recorders and effectively buffers data in situations where a stable voltage source is not available. This makes it an excellent choice for applications requiring reliable data retention even in challenging environments.
4. 32KB Memory: The FRAM chip we utilize provides a generous 32KB of storage capacity, allowing for ample data storage. Additionally, it operates at a high clock speed of to 20 MHz, ensuring swift data read and write operations, ideal for demanding applications.
5. Instant Read/Write: Each byte of our VCC/Logic FRAM breakout board module offers instantaneous read and write capabilities. Moreover, at room temperature, the memory can preserve data for many years, providing the balance between real- accessibility and long-term data retention.
Color:
Material: plastic
Package Contents:
3 x FRAM Breakout Board
Tiedot
| OPC | PYJVYTR |
|---|---|
| Koodit | 6034042920228 (EAN) |
| Tuote- ja turvallisuustiedot |
Tuotetiedot
| Height | 3cm |
|---|---|
| Width | 2cm |
| Length | 3cm |
| Weight | 0.009kg |
| Colour | Blue |
| Material | Plastic |
Vertaile myyjiä tuotteelle 3X MB85RC256V FRAM Breakout Non-Volatile Memory IC VCC/Logic FRAM Breakout Board Module for IoT Sensor Wearable Device
- Uusi alkaen 24,43 €
| Myyjä | Arviot | Takuu | Palautukset | Hinta | Toimitus | Yhteensä | Määrä |
|---|---|---|---|---|---|---|---|
|
Lähetetty varastolta:
|
(132 arvostelua) | - |
30 päivää
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19,93 €
|
+4,50 € Delivery
Arvioitu toimitus:
16-21 loka
|
24,43 €
|
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