3X MB85RC256V FRAM Breakout Non-Volatile Memory IC VCC/Logic FRAM Breakout Board Module for IoT Sensor Wearable Device

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Description & Details

Summary

  • 1. Non-volatile FRAM: FRAM is a non-volatile memory technology of FRAM breakout board that allows for effortless read and write operations up to an astonishing 10 trillion times. This durability ensures long-lasting performance and reliability for your data storage needs.
  • 2. Similar to DRAM with Ferroelectric Layer: Functioning similarly to dynamic random-access memory (DRAM), our FRAM breakout board uses a ferroelectric layer instead of a dielectric layer. This unique design enhances the overall performance and efficiency of the memory, ensuring faster data access and reduced power consumption.
  • 3. Low-Power Data Logging: Our FRAM breakout is specifically designed to work seamlessly with low-power data recorders and effectively buffers data in situations where a stable voltage source is not available. This makes it an excellent choice for applications requiring reliable data retention even in challenging environments.
  • 4. 32KB Memory: The FRAM chip we utilize provides a generous 32KB of storage capacity, allowing for ample data storage. Additionally, it operates at a high clock speed of up to 20 MHz, ensuring swift data read and write operations, ideal for demanding applications.
  • 5. Instant Read/Write: Each byte of our VCC/Logic FRAM breakout board module offers instantaneous read and write capabilities. Moreover, at room temperature, the memory can preserve data for many years, providing the balance between real-time accessibility and long-term data retention.

3X MB85RC256V FRAM Breakout Non-Volatile Memory IC VCC/Logic FRAM Breakout Board Module for IoT Sensor Wearable Device Description

1. Non-volatile FRAM: FRAM is a non-volatile memory technology of FRAM breakout board that allows for effortless read and write operations to an astonishing 10 trillion times. This durability ensures long-lasting performance and reliability for your data storage needs.
2. Similar to DRAM with Ferroelectric Layer: Functioning similarly to dynamic random-access memory (DRAM), our FRAM breakout board uses a ferroelectric layer instead of a dielectric layer. This unique design enhances the overall performance and efficiency of the memory, ensuring faster data access and reduced power consumption.
3. Low-Power Data Logging: Our FRAM breakout is specifically designed to work seamlessly with low-power data recorders and effectively buffers data in situations where a stable voltage source is not available. This makes it an excellent choice for applications requiring reliable data retention even in challenging environments.
4. 32KB Memory: The FRAM chip we utilize provides a generous 32KB of storage capacity, allowing for ample data storage. Additionally, it operates at a high clock speed of to 20 MHz, ensuring swift data read and write operations, ideal for demanding applications.
5. Instant Read/Write: Each byte of our VCC/Logic FRAM breakout board module offers instantaneous read and write capabilities. Moreover, at room temperature, the memory can preserve data for many years, providing the balance between real- accessibility and long-term data retention.

Color:
Material: plastic

Package Contents:
3 x FRAM Breakout Board

Product Tags

Memory

Details

OPC PYJVYTR
Codes 6034042920228 (EAN)

Product Data

Height3cm
Width2cm
Length3cm
Weight0.009kg
ColourBlue
MaterialPlastic

Compare Sellers for 3X MB85RC256V FRAM Breakout Non-Volatile Memory IC VCC/Logic FRAM Breakout Board Module for IoT Sensor Wearable Device

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Dispatched from: China
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30 Days
Free Returns No
£13.28
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Est. Delivery: 16th-21st Oct
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