FRAM Storage Module, Non-volatile 32KB, MB85RC256V, Low Power Consumption Data Recording Memory

FRAM Storage Module, Non-volatile 32KB, MB85RC256V, Low Power Consumption Data Recording Memory Description

1. FRAM is non-volatile and can easily be read/written 10 trillion times.
2. It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer.
3. It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source.
4. The FRAM chip used provides 8 KB of memory, and uses a clock up to 20 MHz.
5. Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature.
6. FRAM is non-volatile and can easily be read/written 10 trillion times.
7. It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer.
8. The FRAM chip used provides 8 KB of memory, and uses a clock up to 20 MHz.
9. Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature.
10. Addr: 1010+A2+A1+A0
11. Default: 0 x 50
12. VCC/Logic: 2.7-5.5V